j tssmi-conaucto'i zpioaueti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. mps-u05 (silicon) mps-u06 telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn silicon annular amplifier transistors . . . designed for general-purpose, high-voltage amplifier and driver applications. bvceo - 60 vdc (mini @> iq - 1.0 madc - mps-u06 80 vdc(min) @ lc = 1.0 madc - mps-u06 ? high power dissipation - pq == 10 w @ tc = 25c ? complements to pnp mps-u&5 and mps-u56 maximum ratings riling symbol mps-u06 mps-u06 unit collector-emitter voltage vqeq 60 80 vdc collector-baie voltage vcb 60 80 vdc emitnr ban voltaos veb 4.0 vdc collector currant - continuout ig 2.0 adc tonl coww dinipation e ta ? 25c pq 1.0 watt derate above 25c 8.0 mw/c total povmr diulpation ? tc ? 25c pd '0 watn derate above 25c 80 mw/c operating and storage junction tj,tj,0 -65 to +150 c tamptrnura range thermal characteristics charaettriitic symlwl max unit therrrnl rninanca, junction to cue b9jc 12.5 c/w thermal retisunce, junction to ambiant r9ja<" 125 c/w (1) r#ja >< measurad uvith tha device lolderad into a typical printed circuit board. npn silicon amplifier transistors f f--^ d ? ? ? a ? ? b-- vt-. "^4- 3 2 1 - ?* ? dim a r c u f g h j k l m a b g - t q rc i l | style 1 ? pin 1. em " 2. ba 3- co millimeters min 9.14 6.60 s.4i 0.38 3.19 2.s 3.94 0.30 12.07 25.02 5.1 2.39 1.14 max 9.63 724 s.e? 0.53 3.33 49sc 4.19 0.41 12.70 28.53 iisc 2.69 1.40 ht r? ?\r ,e llectq inches min 0.360 0.260 0.2 u _ojui 0.12s 0.11 0.155 0.014 0.47s 0.985 ds 0.094 0.045 case 152-02 max 0.375 0.285 0.22; p.1j1 bsc 0.165 0.016 0.60c 1.005 bsc 0.106 0.055 f l, r nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished bv n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors entourages customers to verity that datasheets are current before placing orders. ouniitv
mps-u05, mps-u06 (continued) electrical characteristics (ta = 26c unless otherwise noted) characteriitic symbol typ [ off characteristics collector-emitter breakdown voltage (lc- 1.0 madc, ib = 0> mps-u05 mps-u06 emitter-base breakdown voltage collector cutoff current (vcb - 40 vdc. ie - 0) mps-u05 ivcb - 60 vdc. 1 e ? 0) mps-u06 bvceo bvebo icbo 60 80 4.0 - - - - - - - - - - 1oo 100 vdc vdc nadc on characteristics dc current gain id (>c - so madc. vce = 1.0 vdcl dc = 250 madc. vce = 1-0 vdc) (lc = 500 madc, vcg = 1.0 vdc) collector-emitter saturation voltage! 1 t dc" 250 madc. ib = 10 madc) (1c - 250 madc. ib - 25 madc) base-emitter on voltage (1) (1c - 25o madc, vce " s- vdcl "fe vcelwt) vbe(on) 80 60 - - - - 125 100 55 0.18 0.1 0.74 - - 0.4 - 1.2 - vdc vdc small-signal characteristics current-gam-bandwidth product ( 1 ) |ic ? 200 madc, vce - 5.0 vdc, f = 100 mhz) output capacitance (vcb - 10 vdc, ie = 0, f - 10o khz> *t cob so - 170 6.0 - 12 mht pf mtpulse test: pulse width ^300 m*. duty cycle 2.0%, figure 1 -dc current gain figure 2 - "on" voltages .0 2.d so 10 10 so 100 jm 1c. collector current (ma) figure 3 - dc safe operating area figure 4 - current-gain-bandwidth product vcer ccillectcih mittr voltage (volts) vce '5d vac tv ?5nc x 1c. cduectob cuhbent (mai thr^ -j14, t.vu limitations on the power handling ability of a tran5'?*or: junction temperature and second breakdown. safe operating area curves indicate 'c ? v/g limits of the trannstor that mutt be obmrvad for rcnabl* operation; i e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 3 is bawd on tjipk] " 150c; tc i* variable depending on conditions. at high cam temperatures, thermal limitations will reduce the power that can be handled to value* lew than the limitations imposed by second breakdown.
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